HMA82GR7CJR4N

Power Supply: VDD=1.2V (1.14V to 1.26V) ? VDDQ = 1.2V (1.14V to 1.26V) ? VPP - 2.5V (2.375V to 2.75V) ? VDDSPD=2.25V to 2.75V ? Functionality and operations comply with the DDR4 SDRAM datasheet ? 16 internal banks ? Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available ? Data transfer rates: PC4-3200, PC4-2933, 2666, PC4-2400, PC4-2133, PC4-1866, PC4-1600 ? Bi-Directional Differential Data Strobe ? 8 bit pre-fetch ? Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop) ? Supports ECC error correction and detection ? On-Die Termination (ODT) ? Temperature sensor with integrated SPD ? This product is in compliance with the RoHS directive. ? Per DRAM Addressability is supported ? Internal Vref DQ level generation is available ? Write CRC is supported at all speed grades ? DBI (Data Bus Inversion) is supported(x8) ? CA parity (Command/Address Parity) mode is supported