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? 288 pin Load Reduced DDR4 DRAM Dual In-LIne Memory Modules ? Buffer performance by LRDIMM presenting less load to system ? Compatible with RDIMM systems with appropriate BIOS change ? Power Supply: VDD=1.2V (1.14V to 1.26V) ? VDDQ = 1.2V (1.14V to 1.26V) ? VPP = 2.5V (2.375V to 2.75V) ? VDDSPD=2.25V to 2.75V ? Functionality and operations comply with the DDR4 SDRAM/3DS SDRAM datasheet ? 16 internal banks ? Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available ? Data transfer rates: PC4-3200, PC4-2933, PC4-2666, PC4-2400, PC4-2133 ? Bi-Directional Differential Data Strobe ? 8 bit pre-fetch ? Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop) ? Supports ECC error correction and detection ? On-Die Termination (ODT) ? Temperature sensor with integrated SPD ? This product is in compliance with the RoHS directive.

產品介紹

? 288 pin Load Reduced DDR4 DRAM Dual In-LIne Memory Modules
? Buffer performance by LRDIMM presenting less load to system
? Compatible with RDIMM systems with appropriate BIOS change
? Power Supply: VDD=1.2V (1.14V to 1.26V)
? VDDQ = 1.2V (1.14V to 1.26V)
? VPP = 2.5V (2.375V to 2.75V)
? VDDSPD=2.25V to 2.75V
? Functionality and operations comply with the DDR4 SDRAM/3DS SDRAM datasheet
? 16 internal banks
? Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available
? Data transfer rates: PC4-3200, PC4-2933, PC4-2666, PC4-2400, PC4-2133
? Bi-Directional Differential Data Strobe
? 8 bit pre-fetch
? Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
? Supports ECC error correction and detection
? On-Die Termination (ODT)
? Temperature sensor with integrated SPD
? This product is in compliance with the RoHS directive.